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Advanced Technical Information
PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
VDSS ID25
RDS(on)
= 100 V = 133 A = 8 m
N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 100 100 20 30 V V V V A A A A mJ J V/ns W C C C V~ Nm/lb g
ISOPLUS247 (IXFR) E153432
G
D
S
ISOLATED TAB
D = Drain
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150
G = Gate S = Source
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Fast recovery intrinsic diode Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density
50/60 Hz, RMS, 1 minute Mounting Force
2500 20..120/4.6..20 5
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150C TJ = 175C
Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 250 1000 8 5.5 V V nA A A A m m
RDS(on)
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
DS99239(06/05)
IXFR 200N10P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 135 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W 0.15 K/W ISOPLUS247 Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 200 400 1.5 100 0.4 6 A A V
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, dI/dt = 100 A/s VR = 100 V
140 ns C A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXFR 200N10P
Fig. 1. Output Characteristics @ 25C
200 175 150 VGS = 10V 9V 350 VGS = 10V 300 250 8V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
125 100 75 50 25 0 0 0.2 0.4 0.6 0.8 1
I D - Amperes
200 150 100
8V
7V
7V
6V
50 0
6V
1.2
1.4
1.6
0
0.5
1
1.5
V D S - Volts Fig. 3. Output Characteristics @ 150C
200 175 150 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V
V D S - Volts
2
2.5
3
3.5
4
4.5
5
Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 100A I D = 200A
I D - Amperes
125 100 75 50 25 0 0 0.5 1 6V 7V
5V
V D S - Volts
1.5
2
2.5
3
3.5
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
80 70 TJ = 175C 60
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . Drain Curre nt
2.4 2.2
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 50 100 VGS = 15V
I D - Amperes
50 40 30 20 10
VGS = 10V
TJ = 25C 0 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175
I D - Amperes
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXFR 200N10P
Fig. 7. Input Adm ittance
300 140 120 100
Fig. 8. Transconductance
250
g f s - Siemens
I D - Amperes
200
TJ = -40C 80 60 40 20 0 25C 150C
150 TJ = -40C 25C 50 150C
100
0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
50
100
150
200
250
300
350
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 250 10 9 8 7 VDS = 50V I D = 100A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
200 150 100 50 0
6 5 4 3 2 1 0
V S D - Volts
0
25
50
Q G - nanoCoulombs
75
100 125 150 175 200 225 250
Fig. 11. Capacitance
100,000 f = 1MHz 1000 100 0
Fig.. 12. Forw ard-Bias Fig 12. Fo r w ar d -Bias Safe Operating Area Safe Op e r atin g A r e a
R DS(on) Limit R D S (o n ) Lim it C iss C oss TJ == 1 75 C T J 175C TT == 25 C 25C C
C
Capacitance - picoFarads
10,000
I DD - Amperes I - Amperes
100s 10 0s 100 1 00
1ms 1m s 10ms 10 m s DC
1,000
C rss
100 0 5 10 15 20 25 30 35 40
10 10
DC
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1 1
10 10 V
- Volts 100 VD S - V olts DS
100
1000 10 00
IXFR 200N10P
Fig. 13. Maximum Transient Thermal Resistance
1.00
R( t h ) J C - C / W
0.10
0.01
0.00 0.1 1 10 100 1000
Pulse Width - milliseconds
(c) 2005 IXYS All rights reserved

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